ROHM Announces Advanced MOSFET Tailored for AI Server Demands
Kyoto, Japan – July 1, 2025 – ROHM Semiconductor, a globally recognized leader in semiconductor manufacturing, today announced the release of a groundbreaking new MOSFET designed to meet the rigorous performance and efficiency requirements of modern AI servers. The newly introduced MOSFET boasts industry-leading Safe Operating Area (SOA) performance coupled with exceptionally low ON-resistance, addressing critical needs in the rapidly evolving field of artificial intelligence and high-performance computing.
The exponential growth of Artificial Intelligence workloads necessitates power management solutions that can deliver both high efficiency and robust reliability under demanding operating conditions. AI servers, with their intensive processing demands and continuous power consumption, are particularly sensitive to the performance characteristics of their componentry. ROHM’s latest MOSFET is engineered to directly address these challenges, offering a significant advancement for server designers and manufacturers.
A key highlight of this new MOSFET is its superior Safe Operating Area (SOA) performance. SOA dictates the limits within which a semiconductor device can operate without being damaged. For AI servers, which frequently experience fluctuating load conditions and high current demands, exceptional SOA is paramount to ensure stable and uninterrupted operation, thereby preventing component failure and maintaining system integrity. ROHM’s achievement in this area signifies a substantial leap forward in the reliability and longevity of AI server power supplies.
Furthermore, the MOSFET features remarkably low ON-resistance (RDS(on)). Low ON-resistance is a critical factor in minimizing power loss within a circuit. As electricity flows through the MOSFET, any resistance present converts electrical energy into heat. By reducing RDS(on), ROHM’s new device significantly lowers this energy dissipation, leading to improved power conversion efficiency. This enhanced efficiency translates directly into reduced energy consumption and lower operating costs for data centers, a crucial consideration in the face of increasing global energy demands.
“We are delighted to introduce this new MOSFET, which represents a significant innovation for the AI server market,” stated a spokesperson for ROHM Semiconductor. “Our team has worked diligently to develop a solution that not only meets but exceeds the demanding performance specifications required by today’s most advanced AI systems. The combination of industry-leading SOA and ultra-low ON-resistance will empower our customers to build more efficient, reliable, and powerful servers, ultimately accelerating the progress of AI technology.”
The development of this advanced MOSFET underscores ROHM’s commitment to innovation and its dedication to providing cutting-edge solutions that support the growth of critical technological sectors. By focusing on these key performance metrics, ROHM aims to be a pivotal partner in the advancement of AI infrastructure, enabling faster processing, greater energy savings, and more robust server designs.
This new MOSFET is expected to be a valuable component for power supply units (PSUs), voltage regulator modules (VRMs), and other power management circuits within AI servers, data center equipment, and other high-performance computing applications. ROHM Semiconductor continues to invest in research and development to anticipate and meet the evolving needs of the technology landscape, ensuring its products remain at the forefront of semiconductor innovation.
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PR Newswire Business Technology published ‘ROHM Introduces New MOSFET for AI Servers with Industry-leading SOA Performance and Low ON-resistance’ at 2025-07-01 06:00. Please write a detailed article about this news in a polite tone with relevant information. Please reply in English with the article only.